Paper-Conference

Modeling of the properties of dopants in the NLO semiconductor CdGeAs<sub>2</sub>
Atomistic calculations of dopant binding energies in ZnGeP<sub>2</sub>
AbstractAtomistic model has been applied to study various cation dopants, namely Cu, Ag, B, Al, Ga and In in ZnGeP2. The pairwise …
Source Document DOI